Figure 4.

Gate tunable characteristics of 1L-MoS₂ field-effect devices using BTO, SiO₂ and hBN dielectrics. (a) Source drain current as a function of the gate voltage for a device integrating a BTO (48 nm)/SiO₂ (285 nm) dielectric (see cartoon on top). (inset) Current vs drain-source bias voltage curves acquired at different gate voltages. (b) and (c) Similar data sets to (a) but collected for devices using a SiO₂ (285 nm) dielectric layer and a hBN (∼30 nm)/SiO₂ (285 nm) dielectric layer (see cartoons on top).