Figure 2.
(a) IV characteristics of as-fabricated Ge nanowire FETs at differing DEP frequencies with an ungrounded gate potential, (b) representation of contacted NWs, and (c) schematic of the resulting band alignment.
Official websites use .gov
A
.gov website belongs to an official
government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you've safely
connected to the .gov website. Share sensitive
information only on official, secure websites.