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. 2022 Sep 23;7(39):35288–35296. doi: 10.1021/acsomega.2c04775

Figure 3.

Figure 3

Forward IV characteristics of as-fabricated Ge NW devices fabricated at DEP frequencies of (a) 500 Hz, (b) 1 MHz, and (c) 10 MHz and reverse IV characteristics for devices fabricated at DEP frequencies of (d) 500 Hz, (e) 1 MHz, and (f) 10 MHz, all with a peak-to-peak DEP voltage of 8 V.