Fig. 5. A small magnification STEM image (A) of MoS2 synthesized with the water-assisted method with a large magnification image of the typical MoS2 area (B) (marked in red) with an intensity line-section (C) showing high crystal quality. Typical defect concentration is presented in the bar plot (D) and it is calculated separately for single sulfur VS, double sulfur V2S and sulfur-next-to-sulfur VSVS defect types. Concentrations are calculated from the 16 images taken from different regions. A grain boundary image (E) and its closer inspection show seamless grains stitching (FFT), a sign of local epitaxial growth mode.
