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. 2022 Oct 14;13:6076. doi: 10.1038/s41467-022-33770-3

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a Calculated total ionization coefficients of bulk WSe₂ at room temperature (solid black curve) as a function of E_I/eξλ, where E_I is the ionization energy, ξ is the strength of the applied electric field, and λ is the mean free path. The contributions of the lucky-ballistic mode (red curves) and lucky-drift mode (blue curves) are also shown. b Ionization coefficients of the bulk WSe₂ at various temperatures. c Measured transfer characteristics as a function of top-gate voltage for various temperatures. A magnification view of a blue dashed rectangle is inserted on the left to check the temperature-dependent change of the threshold top-gate voltage. This shows that the WSe₂ I²FET is insensitive to temperature.