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. 2022 Sep 22;27(19):6223. doi: 10.3390/molecules27196223

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© 2022 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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Built-in electric field distribution under P-doped and N-doped in (a) inverted and (b) regular photodiodes. The dashed grey lines are used to identify the layers in the devices from (a) to (b). Images of the interfacial E strength at (c) PEDOT:PSS/MAPbI₃ and MAPbI₃/PC₆₁BM interfaces, (d) TiO₂/MAPbI₃ and MAPbI₃/Spiro interfaces under different doping densities.