| The following abbreviations are used in this manuscript: | |
| Am-GaN | ammonothermal gallium nitride |
| DB | dislocation bundle |
| DSE | defect selective etching |
| FWHM map | full-width at half-maximum map |
| GaN | gallium nitride |
| GND | geometrically necessary dislocation |
| HCD | honeycomb defect |
| HVPE-GaN | hydride vapor-phase epitaxy gallium nitride |
| INT map | integrated intensity map |
| L-XRT | Lang technique X-ray topography |
| PPOS map | peak position angle map |
| RCI | synchrotron monochromatic rocking curve imaging |
| SWB-XRT | synchrotron white-beam X-ray topography |
| TD | threading dislocation |
| TED | threading edge dislocation |
| TMD | threading mixed dislocation |
| TSD | threading screw dislocation |
| XRT | X-ray topography |