Figure 2.

(a) Transfer characteristics at ${\mathrm{V}}_{\mathrm{D}}$ = 100 mV (solid line: drain current vs. gate voltage; dash line: transconductance vs. gate voltage), (b) blocking characteristics at ${\mathrm{V}}_{\mathrm{G}}$ = 0 V, and (c) output characteristics at ${\mathrm{V}}_{\mathrm{G}}$ = 20 V, for the 650 V SiC power MOSFETs with Dod and Oct cells.