| 2D | Two Dimensional |
| ALD | Atomic Layer Deposition |
| BEOL | Back End of Line |
| BTI | Bias Temperature Instability |
| CET | Capacitive Equivalent Thickness |
| CMOS | Complementary Metal Oxide Semiconductor |
| EOT | Equivalent Oxide Thickness |
| FEOL | Front End of Line |
| FET | Field Effect Transistor |
| HAADF | High Angle Annular Dark Field |
| IRDS | International Roadmap for Devices and Systems |
| MOCVD | Metal Organic Chemical Vapor Deposition |
| PTCDA | Perylene Tetracarboxylic Dianhydrid |
| RIE | Reactive Ion Etching |
| SCTD | Surface Charge Transfer Doping |
| SWCNT | Single Walled Carbon Nano Tube |
| TEM | Transmission Electron Microscopy |
| TLM | Transfer Length Measurement |
| TMD | Transition Metal Dichalcogenide |