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. 2022 Oct 11;12(20):3548. doi: 10.3390/nano12203548
2D Two Dimensional
ALD Atomic Layer Deposition
BEOL   Back End of Line
BTI Bias Temperature Instability
CET Capacitive Equivalent Thickness
CMOS Complementary Metal Oxide Semiconductor
EOT Equivalent Oxide Thickness
FEOL Front End of Line
FET Field Effect Transistor
HAADF High Angle Annular Dark Field
IRDS International Roadmap for Devices and Systems
MOCVD Metal Organic Chemical Vapor Deposition
PTCDA Perylene Tetracarboxylic Dianhydrid
RIE Reactive Ion Etching
SCTD Surface Charge Transfer Doping
SWCNT Single Walled Carbon Nano Tube
TEM Transmission Electron Microscopy
TLM Transfer Length Measurement
TMD Transition Metal Dichalcogenide