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. 2022 Oct 29;12:18254. doi: 10.1038/s41598-022-22485-6

Table 1.

ITRS 2013 (predicted LP technology requirements of multi-gate (MG) FET devices for year 2021).

Parameter Predicted value for year 2021 Obtained value
VDD for III–V material, (V) 0.59 0.3
CGG for III–V material, (fF/µm) 0.59 0.0385
Mobility, (cm2/V-s) 300 15,509.8
IOFF (pA/µm) 20 6.7