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. 2022 Oct 19;61(43):17248–17255. doi: 10.1021/acs.inorgchem.2c02835

Figure 3.

Figure 3

(a) XRD pattern of Si1–xGex films prepared using 3-H at substrate temperatures of 525–700 °C. The prominent reflections are assigned to r-cut sapphire (525 and 600 °C) and c-cut sapphire (700 °C). In addition, an unidentified additional reflection in the 700 °C film has been found at 41.5°. (b) Raman analysis reveals typical, broad peaks of amorphous Si1–xGex films using 2-H and 3-H, while the coating using 3-H at 700 °C shows a Ge–Ge signal close to the one expected for pure Ge, illustrating the Ge-rich Si1–xGex phase.