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. 2022 Oct 19;61(43):17248–17255. doi: 10.1021/acs.inorgchem.2c02835

Table 1. Volatility of Precursors Used for Material Synthesis and CVD Parameters Applied for Si1–xGex Thin Film Deposition.

  1-H 2-H 3-H
Si:Ge 1:1 2:1 2:1
recondensation (p ≈ 10–3 mbar) decomp. ∼55–60 °C ∼20–25 °C
CVD   TS ≈ 700 °C TS = 500–700 °C
(p < 10–6 mbar) TP > 25 °C TP > −20 to −5 °C