Electron-beam dynamics of individual impurity atoms and dopants, and their atomically precise manipulation in graphene and other materials. Results include observation of dynamics (D), theoretical description of the mechanism (T), and manipulation (M).
| Material | Element | Results | Note | Ref. |
|---|---|---|---|---|
| Graphene | Fe | D, T | Actually Si? | 65 and 128 |
| Si | D, T | M proposed | 67 | |
| Si | M | M demonstrated | 134 | |
| Si | D, M | 103, 121 and 127 | ||
| N, B | D | 106 | ||
| N | D, T | 135 | ||
| P | D, T, M | 71 | ||
| Al | D, T | 40 | ||
| SWCNT | Si | T, M | Near axis | 116 |
| MoS2 | Re | D, T, M | Damaging | 131 |
| silicon | Bi | D, M | M in 3D | 136 and 137 |
| Bi, Sb | T, M | Novel mechanism | 117 |