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. 2022 Feb 28;16(6):1461–1470. doi: 10.1007/s11571-022-09789-z

Table 1.

Standard parameters (Verechtchaguina et al. 2007)

Parameter Description Value
C Neuronal capacitance 2.1·10-4 μF
R Leak resistance 56.7 MΩ
RL Inductive resistance 46.1 MΩ
L Inductance 1.26 MH
D Noise level [10-10,10-5] Hz MΩ-2
I0 Constant current [220,360] pA
Vr Resting potential -61.5 mV
UT Threshold potential 12 mV
Ures Reset potential -7 mV
τres Time to reset 15 ms
δt Integration step 10-5 s
tsim Simulation time 106 s