Annealing of the SILAR grown Cu_xO nanostructured thin films.

Anionic salt, NaOH (M)	Cycles	Time		Temperature		Crystal phase	Crystallite (nm)	Band gap (eV)	Ref.
		Dipping (s)	Annealing (min)	Growth (°C)	Annealing (°C)
CuSO 4 ·5H 2 O + NaOH + Na 2 S 2 O 3 ·5H 2 O
0.5	20	20	—	70	200–400	As deposited: Cu2O	27.76	—	119
						200 °C: Cu2O	49.95
						300 °C: Cu2O + CuO	40.88
						400 °C: CuO	62.32
1	10	20	60	70	200–350	As deposited: Cu2O	14	2.20	120
						200 °C: Cu2O	14	2.20
						250 °C: Cu2O	14	2.20
						300 °C: CuO	14–26	1.35
						350 °C: CuO	—	1.35
1	30	20	—	70	200–400	As deposited: Cu2O	14–26	2.40	121
						200 °C: Cu2O		2.40
						300 °C: Cu2O + CuO		2.06
						400 °C: CuO		1.73
1	30	20	—	50–90	250–400 (air, N2)	As deposited: Cu2O	∼18	2.10	122
						250 °C: Cu2O		2.10
						300 °C: Cu2O + CuO		—
						350 °C: CuO		1.75
						400 °C: CuO		1.75
2	40	2	60	70	100–500	As deposited: Cu2O	—	2.57	123
						100 °C: Cu2O		2.52
						300 °C: Cu2O (2.27%) + CuO (97.73%)		2.45
						500 °C: Cu2O (1%) + CuO (99%)		1.91
2	40–80	—	60–180	70	75–350	As deposited: Cu2O	15–22	2.42	37
						75 °C: Cu2O		2.02
						150 °C: Cu2O		1.98
						200 °C: Cu2O		1.94
						250 °C: Cu2O + CuO		1.62
						350 °C: Cu2O + CuO (1 h)		—
						350 °C: CuO (3 h)		1.44
2	60	5	60	70	350	As deposited: Cu2O		2.06–2.16	101
						350 °C: Cu2O + CuO (1 h)		1.43–1.51
CuCl2 + NH3OH + H2O2
—	2–10	30	30	RT	20–500	As deposited: Cu2O	14	2.17	124
						100 °C: Cu2O	14	2.22
						150 °C: Cu2O	14	2.17
						450 °C: CuO	16	1.43
						500 °C: CuO	16	1.44
—	400	>30	60	RT	27–600 (air, vacuum)	As deposited: Cu2O	14–21	2.30	125
						100 °C: Cu2O		2.40
						400 °C: CuO		1.85
						600 °C: CuO		1.70
CuCl 2 + NH 3 solution (pH = 10)
—	80	30	30	—	200–400	As deposited: CuO	11.09	1.17	126
						200 °C: CuO	12.05	1.29
						300 °C: CuO	13.86	1.30
						400 °C: CuO	14.88	1.36