Physical deposition techniques with the requirements during deposition.

Physical deposition
Techniques	Raw materials	Conditions	Substrate	Film quality	Budget	Ref.
Thermal evaporation	Red Cu2O powder	Base pressure: 5 × 10−4 Pa	Glass tantalum SiO2	—	High	43
		Temperature: 300 °C
		Annealing temperature: 500 °C
Electron beam evaporation	Cu2O pellets	Deposition time: 5–16 min	Glass	Moderate	High	44
		Substrate temperature: 200 °C
		Accelerating voltage: 2, 4 and 6 kV
		Evaporation pressure: 3 × 10−2 Pa
		Ultimate pressure: 4 × 10−4 Pa
		Filament current: 30 mA
Pulsed laser deposition	Cu, O2	Substrate temperature: 25–400 °C	Quartz ITO NaCl	Excellent	High	45
		p O2: 0–10 mTorr
		Vacuum chamber pressure: Torr
Molecular beam epitaxy	Cu, O2	Incident O+ beam energy: 50 eV	MgO	Excellent	High	46
		Substrate temperature: 100–400 °C
		Cu flux: 2.5 × 1013 to 1.6 × 1014 atoms per cm2 s
		Base pressure: 3 × 10−10 torr
		Total pressure: 3 × 10−9 to 2 × 10−8
		O+ flux: 2.7 × 1014 atoms per cm2 s
Ion plating evaporation	Cu, O2	Base pressure: 10−4 Pa	Glass	Excellent	High	47
		O2 flow rate: 15–45 sccm
		N2 flow rate: 0–6 sccm
		RF power: 300 W
		Annealing temperature: 300 °C
		Substrate temperature: 25 °C
Direct current (DC) sputtering	Cu, O2	Deposition pressure: 6.3 × 10−3 torr	Glass	Excellent	High	48 and 49
		Base pressure: 6 × 10−6 torr
		Sputtering power: 60 W
		Ar gas pressure: 20 sccm
		p O2: 8.0 × 10−4 to 1.8 × 10−3 torr
	Cu, O2	Sputtering power: 10–40 W	Glass stainless steel
		Ar flow rate: 15 sccm
		O2 flow rate: 10 sccm
		Substrate temperature: 300 °C
		Ambient gas pressure: 0.045 Pa
Radio frequency (RF) sputtering	Cu, O2	Substrate temperature: 300 °C	Glass	Excellent	High	50
		Ar flow rate: 10 sccm
		O2 flow rate: 0–2 sccm
		Deposition time: 60 min
		Background pressure: <3 × 10−4 Pa
		Working pressure: 1.7–1.8 Pa