Fig. 2. Field and temperature dependence of eMChA.

a, Low-strain microstructure fabricated by focused ion beam. b, Field dependence of second-harmonic voltage with current applied along the z(c) axis. The signal becomes sizeable when the magnetic field is applied approximately in the plane. The inset sketches the transport bar. c, The red continuous line in the left panel represents temperature dependence of ΔV_2ω = V_2ω(18 T) − V_2ω(−18 T) with the magnetic field applied approximately in the plane. The blue open circles show the Fourier transform intensity of the wavevector corresponding to the 4a₀ unidirectional charge-order phase adopted from ref. ⁷, and the green squares represent the anomalous Nernst effect reported in ref. ³⁴. The right panel displays log-scale temperature dependence of ΔV_2ω and magnetoresistance ratio MR = (ρ_c(18 T) − ρ_c(0))/ρ_c(0), where ρ_c(0) denotes the resistivity at zero field.