Table 2.
Step | Equipment | Details | Comments |
---|---|---|---|
Photolithography to define via on 60% SU-8 | |||
Spin-coat 60% SU-8 6000.5 | Spin-coater |
|
SU-8 thickness 223 nm |
Soft bake | Hot plate | 100°C, 60 s | Hotplate surface temperature |
Photolithography | Contact aligner/ stepper, photomask | 329 mJ/cm2, 365 nm (i-line) UV (Changes with SU-8 composition/thickness) |
Use index matching fluid to improve contact between SU-8 and mask and create hard-contact in the case of contact aligner. |
Post-exposure bake | Hot plate | 100°C, 120 s | Hotplate surface temperature |
Develop in SU-8 developer | Wet bench | 30 s | Vigorous swish. Wash developer in IPA, blow dry IPA in N2 |
Hard bake | Hot plate | 100°C, 30 mins | Hotplate surface temperature |