Table 3.
Process details to fabricate features in S1818 positive photoresist and to strip S1818 photoresist.
| Step | Equipment | Details | Comments |
|---|---|---|---|
| Photolithography to define S1818 photoresist film with vias | |||
| Spin-coat Shipley S1818 | Spin-coater | 4000 RPM, 30 s, 800 RPM/s | Approximately 1µm thick film |
| Soft bake | Hot plate | 100°C, 5 min | Hotplate surface temperature |
| Photolithography | Contact aligner/ stepper, photomask | 75 mJ/cm2, 365 nm (i-line) UV | Use index matching fluid to improve the contact between photoresist and mask and create hard contact in the case of contact aligner. |
| Develop in MF CD-26 developer | Wet bench | 30 s | Wash developer off in D.I. water and blow dry water in N2 |
| S1818 photoresist wet strip process | |||
| Remove S1818 after metal point contact fabrication | Wet bench | Acetone, IPA, N2 blow dry | Acetone removes S1818, IPA removes acetone, N2 evaporates IPA |