Table 5.
Process to fabricate photoresist pillars using AZ5214-E photoresist and to lift-off AZ5214-E photoresist after dielectric deposition.
| Step | Equipment | Details | Comments |
|---|---|---|---|
| Photolithography recipe to define AZ5214-E photoresist pillars with undercut | |||
| Spin-coat AZ5214-E |
Spin-coater | 2500 RPM, 30 s, 2500 RPM/s | Approximately 1 µm thick photoresist film |
| Soft bake | Hot plate | 95°C, 60 s | Hotplate surface temperature |
| Photolithography | Contact aligner / stepper, photomask | 14.4 mJ/cm2, 365 nm (i-line) UV | Use index matching fluid to improve contact between SU-8 and mask and create hard-contact in the case of contact aligner |
| Wait time | Wet bench / hood | 5 mins | N2 bubble release |
| Post-exposure bake | Hot plate | 105°C, 60 s | Hotplate surface temperature. |
| Flood-expose | Contact aligner / stepper, no photomask | 860 mJ/cm2, 365 nm (i-line) UV | Image reversal |
| Develop in AZ300 MIF developer | Wet bench | 30 s | Wash developer off in D.I. water and blow dry water in N2 |
| AZ5214-E photoresist lift-off recipe | |||
| Soak in Remover PG stripper | Wet bench | 20 mins on a hotplate set at 95°C | Occasional stirring |
| Ultrasonication in Remover PG stripper | Wet bench | 20 mins | Heated / unheated water bath for ultrasonication |