Characteristics of OLED devices fabricated with complexes 2, 3, 5, and 6 as emitters. Device structure: ITO|HAT-CN (10 nm)|TSBPA (35 nm)|complex (x nm)|PO-T2T (50 nm)|LiF (0.8 nm)|Al (100 nm).
| Device | Complex | Φ PL a | x b, nm | λ EL c, nm | % λ > 700d nm | EQEmaxe, % | Max. radiosity, mW cm−2 |
|---|---|---|---|---|---|---|---|
| Dev 1 | 2 | ∼0.01f | 1 | 945 | >99 | 0.4 | 0.91 |
| Dev 2 | 2 | 944 | 100 | 0.3 | 0.78 | ||
| Dev 3 | 10 | 942 | 100 | 0.3 | 0.94 | ||
| Dev 4 | 3 | 0.09 ± 0.02 | 1 | 558, 736 | 78 | 4.1 | 4.49 |
| Dev 5 | 2 | 736 | 80 | 2.5 | 3.38 | ||
| Dev 6 | 10 | 742 | 84 | 2.3 | 3.78 | ||
| Dev 7 | 5 | 0.02 ± 0.02 | 1 | 842 | 98 | 1.1 | 2.88 |
| Dev 8 | 2 | 857 | 99 | 1.1 | 3.04 | ||
| Dev 9 | 10 | 868 | 100 | 0.7 | 2.54 | ||
| Dev 10 | 6 | 0.12 ± 0.03 | 1 | 512, 541, 726 | 74 | 4.7 | 5.09 |
| Dev 11 | 2 | 734 | 79 | 4.2 | 5.92 | ||
| Dev 12 | 10 | 735 | 80 | 4.6 | 6.34 |
a
Photoluminescence quantum yield of the emissive layer in nitrogen.
b
Emissive layer (EML) thickness.
c
Electroluminescence maxima.
d
Percent of spectral power at wavelengths above 700 nm.
e
Device maximum external quantum efficiency. Note the minimum error for EQEmax is ±0.1.
f
The accuracy of the ΦPL value is low in this instance due to the low intensity and long wavelength of the luminescence.