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. 2022 Nov 23;8(47):eade4284. doi: 10.1126/sciadv.ade4284

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Copyright © 2022 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).

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Fig. 1. — (A) An illustration of the morphology of the rubbery semiconductor composed of P3HT-NFs and PU. (B) An optical image and microscopic image of the P3HT-NFs/PU composite film. (C) Schematic illustration in an exploded view of the fully Schottky diode. (D) Optical images of the diode under the mechanical strain of 0 and 30%. (E) An optical microscopic image of the diode. (F) I-V characteristics of the rubbery Schottky diode under the mechanical strain of 0, 10, 20, and 30%. (G) Energy levels of AgNWs, AuNPs, P3HT-NFs, and liquid metal. (H) Illustration of the energy band diagram of the metal (liquid metal)– and p-type semiconductor (P3HT)–based Schottky junction. LUMO, lowest unoccupied molecular orbital; HOMO, highest occupied molecular orbital.