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A systematic study on 2D (PEA)2SnI4 FET development. a) Optimization of starting materials: i) self‐passivation by adding slightly excess PEAI, ii) anti‐oxidation using metallic Sn powder, and iii) effect of halide element. b) Grain crystallization engineering through an adduct approach. c) Device fabrication, trace oxygen doping effect on FETs, and the first perovskite‐IGZO FET‐based complementary inverter. a–c) Reproduced with permission.[ 131 ] Copyright 2020, Wiley‐ICH.
