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. 2022 Oct 18;9(33):2203749. doi: 10.1002/advs.202203749

Figure 24.

Figure 24

3D MASnI3‐based FET: Removal of hysteresis through anion engineering. a) Transistor structure. b) Transfer characteristics with different perovskite channel layers. c) Transfer characteristics of I‐pristine and I/Br/Cl transistors measured at various scan speeds. d) I 3d 3/2 core level XPS spectra. e) Calculated binding affinities of halide anions with V I‐site in MASnI3 and MASn(I/Br)3. f) On/off switching stability of I‐pristine and I/Br/Cl transistors. g) Variation of V Th under bias–stress. a–g) Reproduced with permission.[ 95 ] Copyright 2022, Nature Publishing Group.