Table 1.

Intrinsic properties of THPs: carrier concentration and Hall mobility

Material	n [cm−3]	µ Hall (p‐type) [cm2 V−1 s−1]	µ Hall (n‐type) [cm2 V−1 s−1]	T [K]	Process	Measurement	Ref.
CsSnI3	8.73 × 1014	520	536	R.T.	Pressed pellet	Hall measurement	[28]
CsSnI3	1.00 × 1017	585		R.T.	Pressed powder	Hall measurement	[57]
CsSnI3	1.00 × 1019	24.5		R.T.	Thin film	Hall measurement	[90]
CsSnI3/BiI3	1.00 × 1017	26.9		R.T.	Thin film	Hall measurement	[90]
CsSnI3	3.00 × 1016	54		R.T.	Thin film	Hall measurement	[20]
CsSn x Pb1‐ x I3/SnF2	3.00 × 1015	486		R.T.	Thin film	Hall measurement	[20]
Cs2SnI6	1.00 × 1014		310	R.T.	Polycrystalline pellet	I–V/Hall measurement	[91]
Cs2SnI6	1.50 × 1016		79	R.T.	Thin film	Hall measurement	[92]
Cs2SnI6	6.00 × 1016		2.9	R.T.	Thin film	Hall measurement	[93]
Cs2SnI6	9.10 × 1018	20.2		R.T.	Nanocrystal solution dropcast	I–V measurement	[94]
MASnI3	2.00 × 1019	50		R.T.	Pressed pellet	Hall measurement	[83]
MASnI3	9.00 × 1017	200		250	As‐grown crystal	Hall measurement	[84]
MASnI3	7.94 × 1014	322		R.T.	Pressed pellet	Hall measurement	[28]
MASnI3	2.8 × 1017	25		R.T.	Thin film	Hall measurement	[95]
MASn(I/Br/Cl)3	2.2 × 1015	301		R.T.	Thin film	Hall measurement	[95]
(4Tm)2FASn2I7	5.49 × 1018	1.06		R.T.	Thin film	Hall measurement	[96]
FASnI3/(PEA)2SnI4	1.20 × 1016	0.21		R.T.	Thin film	Hall measurement	[97]
HC(NH2)2SnI3	8.38 × 1013		103	R.T.	Pressed pellet	Hall measurement	[28]

n: Carrier concentration, µ _Hall: Hall mobility, T: Temperature