Table 3.

Summary of photovoltaic performances of FASnI₃‐based PSCs

Coadditive engineering
Additive	Coadditive	J SC [mA cm−2]	V OC [V]	FF	PCE [%]	Ref.
SnF2	N2H5Cl	17.63	0.455	0.673	5.4	[122]
SnF2	5‐AVAI	18.89	0.592	0.623	7.0	[187]
SnCl2	KHSQA	17.64	0.552	0.694	6.76	[127]
SnF2	THDH	22.12	0.54	0.71	8.48	[154]
SnF2	PHCl	23.5	0.76	0.64	11.43	[155]
SnCl2	GA	19.75	0.64	0.714	9.03	[156]
SnF2	3T	20.4	0.92	0.76	14.3	[157]

Controlled crystallization
Additive	Compound for crystallization control	J SC [mA cm−2]	V OC [V]	FF	PCE [%]	Ref.
SnF2	EDAI2	21.3	0.583	0.718	8.9	[158]
SnF2	CDTA	21.83	0.64	0.739	10.32	[159]
SnF2	PVA	20.37	0.632	0.693	8.92	[160]
SnF2	HaHc	19.40	0.676	0.70	9.18	[161]
SnF2	FOEI	21.59	0.670	0.75	10.84	[162]
SnF2 and NH4SCN	SnI2·(DMSO) x adduct	20.6	0.91	0.77	14.63	[164]

Template‐assisted growth
Additive	Compound for template‐assisted growth	J SC [mA cm−2]	V OC [V]	FF	PCE [%]	Ref.
SnF2	EVA	22.80	0.523	0.646	7.72	[166]
SnF2	SG‐FASnI3	22.52	0.490	0.662	7.30	[165]

Ionic liquid
Additive	Ionic liquid	J SC [mA cm−2]	V OC [V]	FF	PCE [%]	Ref.
SnF2	BMIBr	19.86	0.70	0.723	10.09	[171]
SnF2	FAAc	23.20	0.59	0.727	9.96	[172]
SnF2	BAAc	22.20	0.65	0.716	10.40	[173]

Cation displacement
Additive/method	Perovskite compound	J SC [mA cm−2]	V OC [V]	FF	PCE [%]	Ref.
HAT method	(FA)0.75(MA)0.25SnI3	19.40	0.55	0.670	7.20	[188]
SnF2	(FA)0.75(MA)0.25SnI3	21.20	0.61	0.627	8.12	[178]
Solvent engineering	(FA)0.75(MA)0.25SnI3	24.30	0.55	0.673	9.06	[179]
SnF2 + TM‐DHP	(FA)0.75(MA)0.25SnI3	22.00	0.76	0.690	11.5	[132]
Vacuum‐Assisted growth	(FA)0.75(MA)0.25SnI3	21.62	0.63	0.755	10.3	[180]
Surface treatment with EDAI2	FA0.98EA0.01SnI3	20.32	0.84	0.78	13.24	[182]
Surface treatment with Me3SiBr	FA0.98EA0.01SnI3	24.11	0.70	0.72	12.22	[183]