Table 6.

Summary of device performance of THP‐based transistors

Material	Dielectric/contact	Structure	Deposition/treatment	µ h [cm2 V−1 s−1]	µ e [cm2 V−1 s−1]	I on/I off	T	Ref.
(PEA)2SnI4	SiO2/Au	BGBC	–	0.62		≈104	R.T.	[240]
PEASnI4	Cytop/Au	TCTG	NH3I‐SAM, MoO x HIL	15		≈106	R.T.	[238]
PEASnI4	SiO2/Au	BGTC	Vacuum deposition, OTS‐SAM	0.78		≈105	R.T.	[244]
PEASnI4	Cytop/Al	TCTG	NH3I‐SAM, C60 EIL		2.1	≈104	R.T.	[248]
(PEA)2SnI4	SiO2/Au	BGTC	MoO x HIL	7.9		≈107	R.T.	[135]
(PEA)2SnI4	SiO2/Au	BGBC	Single crystal, MoO x HIL	40		≈106	R.T.	[247]
(PEA)2SnI4	PVA/Cl‐PVP/Au	BGTC	Polymer dielectric	0.28/0.33		102≈103	R.T.	[249]
(PEA)2SnI4/PVP	Cl‐PVP/Au	BGTC	Polymer dielectric	0.31		≈103	R.T.	[277]
(PEA)2SnI4/PVP, PEO	Cl‐PVP/Au	BGTC	Polymer mixed with precursor	0.013	0.0068	≈104	R.T.	[278]
(PEA)2Sn x Pb1‐ x I4	PVA/Cl‐PVP/Au	BGTC	Sn/Pb ratio	0.02 (x = 0.7)		≈102	R.T.	[279]
(PEA)2SnI4/CNT	SiO2/Au	BGTC	CNT mixed with precursor	1.51		≈105	R.T.	[280]
(PEA)2SnI4	SiO2/Au	BGTC	Oxygen treatment	3.51		≈106	R.T.	[131]
(PEA)2SnI4/CB/EA	SiO2/Au	BGTC	Binary solvent	3.8		≈105	R.T.	[250]
(PEA)2SnI4/Urea	SiO2/Au	BGTC	Urea mixed with precursor	4		≈105	R.T.	[251]
(PEA)2SnI4/CuI	SiO2/Au	BGTC	CuI mixed with precursor	2.61		≈106	R.T.	[106]
(4‐MeO‐PEA)2SnI4	SiO2/Polyimide/Au	BGBC	Melt process	2.6		≈106	R.T.	[243]
(m‐FPEA)2SnI4	SiO2/Pd	BGBC	–	0.2 ≈ 0.6		≈105	R.T.	[27]
(PEA)2CsSnI7	SiO2/Cr/Au	BGBC	Single crystal	34		–	77 K	[262]
(4Tm)2SnI4	SiO2/Au	BGTC	–	2.32		≈106	R.T.	[260]
(TT)2SnI4	SiO2/Au	BGTC	–	10		≈106	R.T.	[259]
(STm)2SnI4	SiO2/Au	BGTC	–	1.52		≈106	R.T.	[281]
FASnI3/(PEA)2SnI4	PMMA/Al2O3/Au	TGBC	–	0.21		≈104	R.T.	[97]
FASnI3/(PEA)2SnI4	SiO2/Pt	BGBC	Vacuum treatment	25		≈106	R.T.	[261]
MASnI3	HfO2/Au	BGTC	I/Br/Cl anion engineering	20		≈107	R.T	[95]
Cs2SnI6	SiO2/Au	BGTC	Mn2+ doping		1.2	≈104	R.T.	[92]
CsSnI3	SiO2/Au	BGTC	Small Pb substitution	55		≈108	R.T.	[20]

Channel layers are solution‐processed unless mentioned otherwise, µ _h: Hole mobility, µ _e: Electron mobility, I _on/I _off: On/off current ratio, T: Temperature