| C4F8
|
octafluorocyclobutane |
|
high frequency capacitively coupled plasma |
|
low frequency capacitively coupled plasma |
| CHF3
|
trifluoromethane |
| DI |
de-ionised |
| DREM |
Deposit, Remove, Etch, Multistep |
| DRIE |
deep reactive ion etching |
| FC |
fluorocarbon |
| HAR |
high-aspect ratio |
| HNO3
|
nitric acid |
| IAD(F) |
ion angular distribution (function) |
| ICP |
inductively coupled plasma |
| IF |
image force |
| LPCVD |
low-pressure chemical vapour deposition |
| MEMS |
micro-electromechanical systems |
| O2
|
oxygen |
| poly-Si |
polycrystalline silicon |
| RIE |
reactive ion etching |
| SEM |
scanning electron microscopy |
| SF5+
|
sulfur pentafluoride cation |
| SF6
|
sulphur hexafluoride |
| SixNy
|
silicon nitride (undefined) |
| SOI |
silicon-on-insulator |
| (t-)SiO2
|
(thermal) silicon dioxide |
| TASCT |
Trench-Assisted Surface Channel Technology |