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. 2022 Nov 4;13(11):1908. doi: 10.3390/mi13111908
C4F8 octafluorocyclobutane
CCPHF high frequency capacitively coupled plasma
CCPLF low frequency capacitively coupled plasma
CHF3 trifluoromethane
DI de-ionised
DREM Deposit, Remove, Etch, Multistep
DRIE deep reactive ion etching
FC fluorocarbon
HAR high-aspect ratio
HNO3 nitric acid
IAD(F) ion angular distribution (function)
ICP inductively coupled plasma
IF image force
LPCVD low-pressure chemical vapour deposition
MEMS micro-electromechanical systems
O2 oxygen
poly-Si polycrystalline silicon
RIE reactive ion etching
SEM scanning electron microscopy
SF5+ sulfur pentafluoride cation
SF6 sulphur hexafluoride
SixNy silicon nitride (undefined)
SOI silicon-on-insulator
(t-)SiO2 (thermal) silicon dioxide
TASCT Trench-Assisted Surface Channel Technology