TABLE I.

Performance Summary and Comparison with the State-of-the-Art

Specifications	This Worka	[7]	[29]	[30]	[31]
Technology	180 nm HV BCD	350 nm HV CMOS	180 nm HV BCD	180 nm HV CMOSb	180 nm HV CMOS
Transducer	CMUT	CMUT	CMUT	CMUT	PZT
Element Level Imp. Matching	YES	NO	NO	NO	NO
TX/RX Array	16-TX/1-RX	56-TX/48-RX	64 TRX	4-TX/4-RX	7 TRX
Bandwidth (MHz)	2–4	40	7	5.2	5
Element Cap. Load	25 pF	90 fF	15 pF	40 pF	79.9 pF
Avg. Power (mW)	3.6 @ 1.8 V	20	4.9c	14.3	N/A
Area (mm)	2.6	1.54	29.7	1.5d	2
TX Max Pulse (V)	60	30	NA	30	32
RX Gain (dB)	74–90	106	106	96.6	N/A
Input-Referred Noise (pA/√Hz)	2–3 @3 MHz	0.31@20 MHze	2 @5 MHz	1.35 @3 MHzf	N/A
Application	Intracranial Ultrasound	Intracardiac Echocardiography	Intracardiac Echocardiography	Medical Ultrasound	Fitness Tracking

^aIncludes BGR and bias generation circuitry.

^bGate-oxide can handle 30-V swing.

^cIt indicates the TIA power consumption.

^dExcluding the pads

^eTIA I-R noise with 90-fF CMUT

^fCalculated based on reported values