Fig. 2. Photoelectric evaluation of FAST-MAPbI₃.

a XRD spectra of as-milled MAPbI₃ powder and the FAST-synthesized MAPbI₃ bulk. The red diamond represents the peak from the cubic phase. b UV–vis absorption and steady-state PL spectra of FAST-MAPbI₃ and MAPbI₃ powder. c TRPL spectra of solution-processed MAPbI₃ thin film, as milled MAPbI₃ powder, and FAST-MAPbI₃. Inset: TRPL of MAPbI₃ single crystal. d I–V curve of the holy-only device under dark conditions. Inset: device configuration with marked dimension. e Comparison of trap density and mobility between FAST-MAPbI₃ and state-of-the-art solution-processed thin film and single crystal of MAPbI₃. The orange square, blue star, and green circle represent the poly-crystal, the FAST-crystal, and the single crystal, respectively. f Picture of the MIM transistor device and an optical microscopic image showing the channel length of 36 µm of the transistor device. I–V curve of the FAST photodetector under dark and light with poling bias of g −2 V and h −8 V, respectively. i Transient photocurrent of the FAST-MAPbI₃ photodetector under a periodic on/off light switching test.