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. 2022 Dec 2;13:7432. doi: 10.1038/s41467-022-35160-1

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Schematic image of textile memristor network, including top-layer device with synaptic plasticity and bottom-layer device with neural functions. b Structure of fiber-based memristor consisting of Ag/MoS₂/HfAlO_x/CNT. c Scanning electron microscopy (top) and cross-sectional transmission electron microscopy (bottom) images of fiber-based memristor. Scale bar of top image, 40 μm. d Reversible nonvolatile memory and volatile threshold-switching memristor in reconfigurable textile chip, where both artificial synaptic plasticity and integrate-and-fire functions are simulated.