Input optimization parameters of the TCO, ETL, and absorber layer of the study.

Parameters	ITO	TiO2	PCBM	ZnO	C60	IGZO	SnO2	WS2	CeO2	Cs2BiAgI6
Thickness (nm)	500	30	50	50	50	30	100	100	100	800a
Band gap, Eg (eV)	3.5	3.2	2	3.3	1.7	3.05	3.6	1.8	3.5	1.6
Electron affinity, X (eV)	4	4	3.9	4	3.9	4.16	4	3.95	4.6	3.90
Dielectric permittivity (relative), εr	9	9	3.9	9	4.2	10	9	13.6	9	6.5
CB effective density of states, NC (1/cm3)	2.2 × 1018	2 × 1018	2.5 × 1021	3.7 × 1018	8.0 × 1019	5 × 1018	2.2 × 1018	1 × 1018	1 × 1020	1 × 1019
VB effective density of states, NV (1/cm3)	1.8 × 1019	1.8 × 1019	2.5 × 1021	1.8 × 1019	8.0 × 1019	5 × 1018	1.8 × 1019	2.4 × 1019	2 × 1021	1 × 1019
Electron mobility, μn (cm2 V−1 s−1)	20	20	0.2	100	8.0 × 10−2	15	100	100	100	2
Hole mobility, μh (cm2 V−1 s−1)	10	10	0.2	25	3.5 × 10−3	0.1	25	100	25	2
Shallow uniform acceptor density, NA (1/cm3)	0	0	0	0	0	0	0	0	0	1 × 1015a
Shallow uniform donor density, ND (1/cm3)	1 × 1021	9 × 1016	2.93 × 1017	1 × 1018	1 × 1017	1 × 1017	1 × 1017	1 × 1018	1021	0a
Defect density, Nt (1/cm3)	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a
Reference	14	14	14	14	14	14	14	14	14	72

^aThis study.