Input optimization parameters HTL the study¹⁴.

HTL	Cu2O	CuSCN	CuSbS2	P3HT	PEDOT:PSS	Spiro-MeOTAD	NiO	CuI	CuO	V2O5	CFTS	CBTS
Thickness (nm)	50	50	50	50	50	200	100	100	50	100	100	100
Band gap, Eg (eV)	2.2	3.6	1.58	1.7	1.6	3	3.8	3.1	1.51	2.20	1.3	1.9
Electron affinity, X (eV)	3.4	1.7	4.2	3.5	3.4	2.2	1.46	2.1	4.07	4.00	3.3	3.6
Dielectric permittivity (relative), εr	7.5	10	14.6	3	3	3	10.7	6.5	18.1	10.00	9	5.4
CB effective density of states, NC (1/cm3)	2 × 1019	2.2 × 1019	2 × 1018	2 × 1021	2.2 × 1018	2.2 × 1018	2.8 × 1019	2.8 × 1019	2.2 × 1019	9.2 × 1017	2.2 × 1018	2.2 × 1018
VB effective density of states, NV (1/cm3)	1 × 1019	1.8 × 1018	1 × 101	2 × 1021	1.8 × 1019	1.8 × 1019	1 × 1019	1 × 1019	5.5 × 1020	5.0 × 1018	1.8 × 1019	1.8 × 1019
Electron mobility, μn (cm2 V−1 s−1)	200	100	49	1.8 × 10−3	4.5 × 10−2	2.1 × 10−3	12	100	100	3.2 × 102	21.98	30
Hole mobility, μh (cm2 V−1 s−1)	8600	25	49	1.86 × 10−2	4.5 × 10−2	2.16 × 10−3	2.8	43.9	0.1	4.0 × 101	21.98	10
Shallow uniform acceptor density, NA (1/cm3)	1 × 1018	1 × 1018	1 × 1018	1 × 1018	1 × 1018	1.0 × 1018	1 × 1018	1.0 × 1018	1 × 1018	1 × 1018	1 × 1018	1 × 1018
Shallow uniform donor density, ND (1/cm3)	0	0	0	0	0	0	0	0	0	0	0	0
Defect density, Nt (1/cm3)	1.0 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1.0 × 1015a	1 × 1015a	1.0 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a	1 × 1015a

^aThis study.