Skip to main content
. 2022 Dec 5;22(23):9506. doi: 10.3390/s22239506

Figure 10.

Figure 10

(a) Schematic diagram of the device fabrication and self−powered IoT using flexible AD PZT film by ILLO process. (b) SEM image of AD PZT films grown on sapphire wafers and annealed at 700, 800 and 900 °C for 1 h. (c) P−E hysteresis loops of annealed PZT films. (d) XRD patterns of annealed PZT films. (e) The bending durability test results of the flexible energy harvester for 115,000 cycles. Reproduced with permission [119].