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. 2022 Nov 22;12(23):4109. doi: 10.3390/nano12234109

Table 2.

Berezinskii–Kosterlitz–Thouless (BKT) parameters derived by the analysis of the resistivity and I-V characteristics curves of some of the thinner NbN films. Column headings, from left: sample acronym *; BKT temperature derived by ρ(T) fitting with Equation (2); SC transition temperature at B = 0 (see the text); normal state sheet resistance at 20 K; γ value (see the text and Equation (1)); VAP polarizability.

Sample TBKT (K) Tc0 (K) ** RN (Ω) γ ϵ
MO5a 9.70 ± 0.03 9.90 502.30 ± 0.01 0.970 ± 0.002 10.28 ± 0.030
MO5b 10.30 ± 0.02 10.60 620 ± 1.06 1.500 ± 0.005 11.49 ± 0.022
MO10 13.060 ± 0.008 13.31 129.8 ± 0.60 1.56 ± 0.09 25.5 ± 0.11

* For meaning of sample acronym see the caption of Table 1. ** The fitting error on Tc0 is of the order of 10−4.