Table 1.

Layer properties for simulation 60, 61, 62, 63, 64, 65, 66, 67, 69, 70, 77, 78, 79].

Parameters (unit)	FTO	WS2	Sb2Se3	Sb2S3
Thickness (nm)	50	30	1200	1200
Bandgap (eV)	3.60	2.20	1.20	1.62
Electron affinity (eV)	4	3.95	4.16	3.70
Dielectric permittivity	9	13.60	14.50	7.08
CB effective DOS (cm−3)	2.2×1018	2.2×1018	2×1018	2×1019
VB effective DOS (cm−3)	1.80×1019	1.80×1019	1019	1019
Electron mobility (cm2V−1s−1)	100	100	16.70	9.80
Hole mobility (cm2V−1s−1)	25	100	16.70	10
Donor density, ND (cm−3)	5×1018	1017 (Sb2Se3), 1018 (Sb2S3)	0	0
Acceptor density, NA (cm−3)	0	0	1013	1015
Defect type	acceptor	acceptor	donor	donor
Bulk defect density, Nt (cm−3)	1014	1018	1012	1012
Electron capture cross-section, σe (cm2)	10–15	10–15	10–15	10–15
Hole capture cross-section, σp (cm2)	10–15	10–15	10–15	10–15
Defect position above EV (eV)	0.6	0.6	0.6	0.6