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. 2022 Dec 13;15:12. doi: 10.1007/s40820-022-00985-4

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© The Author(s) 2022, corrected publication 2023

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Fig. 4 — Characterization of the devices. AFM images for the a Spiro-OMeTAD, b MoO_x and c ITO surface morphology of the partial PSC device. d SEM of the ITO film based on partial PSC. e Optical images (front and glass side) of the aged IC-PSC and reference PSC after 1000 h of MPPT. f, XPS spectra of the aged PSC electrode surface copper valence state after 1000 h of MPPT. Cross section EDX mapping of Cu, I, and Pb elements for aged IC-PSC (g) and reference PSC (h) after 1000 h of MPPT