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. 2022 Dec 6;7(50):47341–47348. doi: 10.1021/acsomega.1c00210

Figure 1.

Figure 1

(a) Schematic of the MACE process that results in vertically oriented arrays of Si NWs on the surface of a Si(001) substrate. (b) Cross-sectional and top-view (inset) scanning electron microscopy (SEM) images of Si NW arrays fabricated using the MACE process. Scale bars in the images represent 500 nm.