| AC | Alternating current |
| BOX | Burried oxide |
| BP | Black phosphorus |
| BTO | Barium tritanate |
| CMOS | Complementary metal–oxide–semiconductor |
| DAC | Digital to analogue converter |
| DC | Direct current |
| DSP | Digital signal processing |
| EOM | Electro-optical modulator |
| ER | Extinction ratio |
| ERM | Electro-refraction modulator |
| FCA | Free carrier absorption |
| GOI | Germanium on insulator |
| Ge-on-SOI | Germanium on silicon on insulator |
| HC-PBGF | Hollow core photonic bandgap fibre |
| IL | Insertion loss |
| IMDD | Intensity-modulation, direct detection |
| LWIR | Long wave infrared |
| mid-IR | Mid-infrared |
| MIM | Michelson interferometer modulator |
| MOSCAP | Metal-oxide-semiconductor capacitor |
| NRZ | Non return to zero |
| MBE | Molecular beam epitaxy |
| MRM | Microring modulator |
| MZM | Mach-Zehnder modulator |
| near-IR | Near-infrared |
| OOK | On-off keying |
| PZT | Lead zirconate tritanate |
| PAM | Pulse amplitude modulation |
| QW | Quantum well |
| SISCAP | Silicon-insulator-silicon capacitor |
| SMF | Single mode fibre |
| SOI | Silicon on insulator |
| SWIR | Short wave infrared |
| TDFA | Thulium-doped fibre amplifier |
| TO | Thermo optic |
| TPA | Two photon absorption |
| VOA | Variable optical attenuator |
| WDM | Wavelength division multiplexing |