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. 2022 Dec 8;22(24):9620. doi: 10.3390/s22249620
AC Alternating current
BOX Burried oxide
BP Black phosphorus
BTO Barium tritanate
CMOS Complementary metal–oxide–semiconductor
DAC Digital to analogue converter
DC Direct current
DSP Digital signal processing
EOM Electro-optical modulator
ER Extinction ratio
ERM Electro-refraction modulator
FCA Free carrier absorption
GOI Germanium on insulator
Ge-on-SOI Germanium on silicon on insulator
HC-PBGF Hollow core photonic bandgap fibre
IL Insertion loss
IMDD Intensity-modulation, direct detection
LWIR Long wave infrared
mid-IR Mid-infrared
MIM Michelson interferometer modulator
MOSCAP Metal-oxide-semiconductor capacitor
NRZ Non return to zero
MBE Molecular beam epitaxy
MRM Microring modulator
MZM Mach-Zehnder modulator
near-IR Near-infrared
OOK On-off keying
PZT Lead zirconate tritanate
PAM Pulse amplitude modulation
QW Quantum well
SISCAP Silicon-insulator-silicon capacitor
SMF Single mode fibre
SOI Silicon on insulator
SWIR Short wave infrared
TDFA Thulium-doped fibre amplifier
TO Thermo optic
TPA Two photon absorption
VOA Variable optical attenuator
WDM Wavelength division multiplexing