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. 2022 Dec 7;12(24):4358. doi: 10.3390/nano12244358

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© 2022 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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(a) The transfer characteristics of the a-IGZO-TFTs with various annealing temperature. (b) Evolution of the performances (ΔV_th, SS) extracted from the transfer curves. (c) The transfer characteristics of TFTs with a-IGZO films deposited at a high oxygen pressure of 10 Pa, followed by annealing in different atmospheres. (d) The O 1s XPS spectra for a-IGZO films deposited at 10 Pa and annealing in O₂ for 1 h.