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. 2022 Dec 2;16(12):20222–20228. doi: 10.1021/acsnano.2c05645

Table 1. Energy Consumption of Proposed Device Compared to Existing Technologies46a.

technology energy (fJ) latency (ns)
proposed device 10 5
SRAM 50 2.7
DRAM 65 3.4
SOT-MRAM 40 2.6
a

For SRAM and DRAM the 45 nm transistor technology is used.