Figure 4.

THz response properties of the Ta₂NiSe₅ photodetectors at room temperature. a) Schematic illustration of the Ta₂NiSe₅ photodetector with electrical configuration under THz irradiation. b) Time‐resolved photoresponse signal of the photodetector under 0.03, 0.10, 0.12, and 0.30 THz illumination at bias voltage of 0.1 V. c) I _ph at the frequency of 0.03 THz as a function of the incident power at different bias voltage from −1.2 V to 1.2 V with a step of 0.2 V. d) Response/recovery times for the photodetector at 0.1 THz with a bias voltage of 0.1 V. e,f) R _i and NEP of the photodetector with the function of bias voltage at 0.1 and 0.3 THz. The left axis is the R _i and right axis is the NEP.