Table 1.
Performance comparison of the reported 2D materials THz detectors
| Material | Frequency [THz] | Responsivity | NEP [W Hz−1/2] | Response time | Ref. |
|---|---|---|---|---|---|
| Graphene | 0.14 | 450 V W−1 | 1 × 10−10 | ≈2 µs | [58] |
| Graphene | 0.3 | 0.15 V W−1 | 3 × 10−8 | — | [6] |
| BP | 0.15 | 300 V W−1 | 1 × 10−9 | ≈4 µs | [59] |
| BP | 0.29 | 1.7 V W−1 | 1 × 10−10 | — | [60] |
| Bi2Te(3− x )Se x | 0.29 | 3 V W−1 | 1 × 10−8 | — | [61] |
| MoSe2 | 0.29 | 38 mV W−1 | 6.6 × 10−6 | — | [62] |
| SnSe2 | 0.12 | 170 V W−1 | 2 × 10−10 | ≈2.2 µs | [63] |
| PdSe2 | 0.1 | 20 mA W−1 | 1.42 × 10−10 | ≈7.5 µs | [64] |
| PtTe2 | 0.12 | 1.6 A W−1 (101 V W−1) | — | ≈17 µs | [7] |
| Ta2NiSe5 | 0.1 (0.3) |
0.36 A W−1 (755 V W−1) 0.036 A W−1 (75 V W−1) |
4.2 × 10−11 4.17 × 10−10 |
≈1.1 µs ≈1.8 µs |
This work |