Fig. 3. Excitation energy dependence of quantum interference.

a, b Raman spectra of 2L- and 3L WS₂ under different excitation energies (E_L) at 4 K, respectively. The intensities are normalized to the Raman modes of silicon substrate (524 cm⁻¹ at 4 K). The data are offset for clarity. c The intensity of shear and LA(M) modes respect to the excitation energies. The dotted gray line is the reflection spectrum of 2L-WS₂.