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. 2023 Jan 10;14:146. doi: 10.1038/s41467-022-35667-7

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a TOF-SIMS secondary ion images of LiS^-, PS^-, PO^-, LiO^-, and Si^- species after Cs⁺ consecutive sputtering for 120 s (the length of scale bar is 40 μm) for the PS-LPO-Si sample. b Depth profile of various secondary ion species obtained by sputtering. c The 3D view images of the sputtered volume corresponding to the depth profiles in (a) show the gradient oxy-thiophosphate distribution. The analysis area is 75 × 75 μm².