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. Author manuscript; available in PMC: 2023 Jan 12.
Published in final edited form as: J Am Chem Soc. 2020 Dec 7;142(50):21131–21139. doi: 10.1021/jacs.0c10151

Figure 4.

Figure 4.

Exfoliation of TIIP/MoS2heterostructures and thickness-dependent luminescence. (A) Schematic of the dry exfoliation of layered TIIP films. PET stamp is positioned above the TIIP/MoS2 heterostructure. Using micromechanical stamp exfoliation, the vdW-layered TIIP films can be exfoliated down to few-nanometer thick sheets. (B) (Top) AFM topography of bulk layered TIIP/MoS2 heterostructures. TIIP film covers both monolayer MoS2 and the Al2O3 substrate but grows preferentially on the MoS2. (Bottom) AFM height profile of >120 nm bulk heterostructure. Scale bar = 2 μm. (C) (Top) AFM topography of exfoliated TIIP/MoS2 heterostructures. Topographies trace the height from the exfoliated TIIP film to the bare sapphire substrate exposed in the exfoliation. (Bottom) AFM height profile of the heterostructure exfoliated to <4 nm. Scale bar = 2 μm. (D) PL spectra at 77 K for varying TIIP film thicknesses ranging from 2.5 to >120 nm. λexc = 2.33 eV. Spectra are normalized by the absorbed laser power. Bulk (>120 nm, dark blue) TIIP is magnified by 25× for visual clarity.