Extended Data Table 1.
a) For vOECT, the channel area is W×d; for cOECT, the area is W×L. b) The standard deviation of the OECT metrics is from the performance of at least 10 devices. c) Here the volume-normalized gm is not reported, since it is a parameter only suitable for evaluating the performance of a material in the same architecture. Importantly, for real-world applications, a transistor footprint (area-normalized) gm and current are far more relevant when fabricating circuits, as they determine how dense the OECT integration can be while retaining high performance. Thus, the goal in most transistor circuitry fabrication is not to achieve high geometry-normalized gm, but high gm/current in limited areas, which are the ION,A and gm,A reported here. Similarly, the calculated mobilities of cOECTs and vOECTs are discussed in Methods.