Fig. 3. TEM analysis of the GaAs/GaP SL NW. (a) and (b) HAADF-STEM images of the GaAs/GaP SL at the beginning and near to the NW tip, respectively. (c) A plot of the thickness of GaAs and GaP SL segments along the growth direction for a NW with DNP = 34 nm. The lines represent the average thickness of GaAs (6.4 nm) and GaP (8.2 nm) segments. (d) STEM intensity profile along the blue arrow indicated in (b).
