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. 2022 Feb 14;9(12):nwac020. doi: 10.1093/nsr/nwac020

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© The Author(s) 2022. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd.

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited.

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Figure 2. — Nonlinear Hall effect in T_d-TaIrTe₄. (a) Optical image of a 12-electrode device with active areas protected by hBN. (b) First-harmonic as a function of at 100 K. (c) Second- and third-harmonic (n = 2, 3) as a function of at 100 K. (d) Third-harmonic as a function of measured at 300 K and the signals were taken from the as prepared and after one month or three months. All measured voltage signals at the transverse direction are perpendicular to the current direction, which is marked in (a).

Inline graphic — Nonlinear Hall effect in T_d-TaIrTe₄. (a) Optical image of a 12-electrode device with active areas protected by hBN. (b) First-harmonic as a function of at 100 K. (c) Second- and third-harmonic (n = 2, 3) as a function of at 100 K. (d) Third-harmonic as a function of measured at 300 K and the signals were taken from the as prepared and after one month or three months. All measured voltage signals at the transverse direction are perpendicular to the current direction, which is marked in (a).