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. 2023 Jan 26;13:1454. doi: 10.1038/s41598-023-28505-3

Table 2.

Comparison of different resistive switching parameters at various thicknesses of SnOx and HfOx layers of ITO/SnOx/HfOx/ITO/PEN devices.

SnOx:HfOx (in nm) ICC (μA) On/off ratio Set/reset voltage (V) Retention Endurance
10:6 200 5 1.1/−1.2 102 110
20:6 500 20 1.5/−1.3 103 160
35:6 100 500 1.3/−1.6 104 104
35:10 1000 50 0.85/−1.1  ~ 104 800
35:15 1000 20 1.3/−1.4  ~ 104 600
35:0 1000 50 1/−3  ~ 103 400