Table 2.
Comparison of different resistive switching parameters at various thicknesses of SnOx and HfOx layers of ITO/SnOx/HfOx/ITO/PEN devices.
SnOx:HfOx (in nm) | ICC (μA) | On/off ratio | Set/reset voltage (V) | Retention | Endurance |
---|---|---|---|---|---|
10:6 | 200 | 5 | 1.1/−1.2 | 102 | 110 |
20:6 | 500 | 20 | 1.5/−1.3 | 103 | 160 |
35:6 | 100 | 500 | 1.3/−1.6 | 104 | 104 |
35:10 | 1000 | 50 | 0.85/−1.1 | ~ 104 | 800 |
35:15 | 1000 | 20 | 1.3/−1.4 | ~ 104 | 600 |
35:0 | 1000 | 50 | 1/−3 | ~ 103 | 400 |